Self-organized cell assembly formation

Self-organized propagation patterns from dynamic self-assembly in monolayers.

Propagation of localized orientational waves, as imaged by Brewster angle microscopy, is induced by low intensity linearly polarized light inside axisymmetric smectic-C confined domains in a photosensitive molecular thin film at the air/water interface (Langmuir monolayer). Results from numerical simulations of a model that couples photoreorientational effects and long-range elastic forces are ...

Self-organized pattern formation in coastal barrier

Self-Assembly and Pattern Formation

Pattern formation on micrometer and nanometer length scales has direct technological application and is of fundamental interest. These patterns can be achieved using sophisticated lithography techniques, but soft materials such as polymers can self-assemble into regular patterns by merely changing e.g. the temperature of the system. Our work on self-assembly and pattern formation has focused on...

Formation of Low Temperature Self-Organized Nanoscale Nickel Metal Islands Formation of Low Temperature Self-Organized Nanoscale Nickel Metal Islands

The growth and evolution of nanometer sized Ni metal islands deposited under low temperature non-UHV conditions as a function of metal layer thickness, growth temperature and time is reported. The temperature of formation of the islands has been intentionally kept low for possible applications in flat panel display technology and also to act as a catalyst for carbon nanotube growth. It is shown...

Hierarchically organized structures engineered from controlled evaporative self-assembly.

By constraining an asymmetric comb block copolymer (CBCP) toluene solution to evaporate in a wedge-on-Si geometry composed of a wedge lens situated on a Si substrate, gradient concentric stripelike surface patterns of CBCP at the microscopic scale were yielded as a direct consequence of controlled evaporative self-assembly of CBCP. The formation of either straight stripes or jagged stripes was ...